Full-band tunneling in high-κ dielectric MOS structures

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 694-696

  Sacconi, F ^a   Jancu, J M ^b   Povolotskyi, M ^a   Di Carlo, A ^a  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; PARAMETER ESTIMATION;

GATE DIELECTRIC MATERIALS; QUANTUM MECHANICAL METHODS;

MOS DEVICES;

EID: 34247115566     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.043     Document Type: Article

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