A flip-Chip AlGaInP LED with GaN/sapphire transparent substrate fabricated by direct wafer bonding

Chinese Physics Letters

Volumn 24, Issue 4, 2007, Pages 1110-1113

  Liang, Ting ^a   Guo, Xia ^a   Guan, Bao Lu ^a   Guo, Jing ^a   Gu, Xiao Ling ^a   Lin, Qiao Ming ^a   Shen, Guang Di ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; FLIP CHIP DEVICES; GALLIUM ARSENIDE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDIUM ALLOYS; LUMINANCE; SEMICONDUCTOR ALLOYS; SILICON WAFERS; SUBSTRATES; WAFER BONDING;

CURRENT-VOLTAGE; DIRECT WAFER BONDING; FLIP CHIP; GAN-SAPPHIRE; I-V MEASUREMENTS; LIGHTEMITTING DIODE; RED LIGHT; SILICON SUBMOUNTS; TRANSPARENT SUBSTRATE; WAFERBONDING TECHNOLOGY;

LIGHT EMITTING DIODES;

EID: 34247103743     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/4/072     Document Type: Article

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