Integration of melting excimer laser annealing in power MOS technology

IEEE Transactions on Electron Devices

Volumn 54, Issue 4, 2007, Pages 852-860

  Privitera, Vittorio ^a   La Magna, Antonino ^a   Spinella, Corrado ^a   Fortunato, Guglielmo ^b   Mariucci, Luigi ^b   Cuscuna M ^b   Camalleri, Cateno Marco ^c   Magrì, Angelo ^c   La Rosa, Giovanna ^c   Svensson, Bengt G ^d   Monakhov, Eduard V ^d   Simon, Frank ^e  

^a CNR   (Italy)

^b IFN CNR   (Italy)

^c STMICROELECTRONICS   (Italy)

^d UNIVERSITY OF OSLO   (Norway)

^e NONE   (Germany)

Author keywords

2 D dopant profiling; 2 D simulation code; Device integration; Device yield; Laser annealing; MOSFET; Shallow junction

Indexed keywords

ANNEALING; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; DOPING (ADDITIVES); EXCIMER LASERS; FABRICATION; OPTIMIZATION; SEMICONDUCTING SILICON;

DEVICE INTEGRATION; ELECTRICAL CHARACTERISTICS; EXCIMER LASER ANNEALING;

MOSFET DEVICES;

EID: 34147102946     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.892011     Document Type: Article

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