Growth of Ge islands and nanocrystals using RF magnetron sputtering and their characterization

Nanotechnology

Volumn 18, Issue 17, 2007, Pages

  Das, K ^a   Goswami, M L N ^a   Dhar, A ^a   Mathur, B K ^a   Ray, S K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL BONDS; GERMANIUM; MAGNETRON SPUTTERING; PHOTOLUMINESCENCE; RAMAN SCATTERING; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL BONDING; POSTDEPOSITION ANNEALING; RADIOFREQUENCY MAGNETRON SPUTTERING;

NANOCRYSTALS;

GERMANIUM; NANOCRYSTAL;

ARTICLE; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; CRYSTALLIZATION; INFRARED RADIATION; MICROWAVE RADIATION; PRIORITY JOURNAL; RADIOFREQUENCY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 34047272135     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/17/175301     Document Type: Article

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