Epitaxial lateral overgrowth (ELO) of homoepitaxial diamond through an iridium mesh

Diamond and Related Materials

Volumn 16, Issue 4-7 SPEC. ISS., 2007, Pages 711-717

  Bauer, T ^a   Schreck, M ^a   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

Diamond growth and characterization; Epitaxial lateral overgrowth; High resolution X ray diffraction; Homoepitaxy

Indexed keywords

DIAMONDS; ELECTRON BEAMS; EVAPORATION; IRIDIUM; LATTICE CONSTANTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; X RAY DIFFRACTION;

DIAMOND GROWTH; EPITAXIAL LATERAL OVERGROWTH (ELO); HIGH RESOLUTION X RAY DIFFRACTION; HOMOEPITAXY; MICROWAVE PLASMA CHEMICAL VAPOUR DEPOSITION PROCESS (MWPCVD);

EPITAXIAL GROWTH;

EID: 34047263978     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.11.037     Document Type: Article

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