Characterization of all-Nb nanodevices fabricated by electron beam lithography and ion beam oxidation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 2, 2007, Pages 448-454

  Im, Hyunsik ^a,b   Pashkin, Yu A ^c,d   Yamamoto, T ^b   Astafiev, O ^b   Nakamura, Y ^b   Tsai, J S ^b  

^a Dongguk University   (South Korea)

^b Discovery Research Institute   (Japan)

^c NEC CORPORATION   (Japan)

^d LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; ELECTRON BEAM LITHOGRAPHY; ION BEAMS; NIOBIUM; OXIDATION; SUPERCONDUCTING TRANSITION TEMPERATURE;

ALL-NIOBIUM NANODEVICES; ION BEAM OXIDATION;

MICROELECTRONICS;

EID: 34047180087     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2715971     Document Type: Article

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