Single-charge devices with ultrasmall Nb/AlO x/Nb trilayer Josephson junctions

Journal of Applied Physics

Volumn 97, Issue 5, 2005, Pages

  Dolata, R ^a   Scherer, H ^a   Zorin, A B ^a   Niemeyer, J ^a  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIZATION; BIAS VOLTAGE; MAGNETIC INDUCTION; SINGLE ELECTRON TUNNELING (SET); SUPERCONDUCTING CIRCUITS;

ANODIC OXIDATION; CAPACITANCE; DRY ETCHING; ELECTRON BEAM LITHOGRAPHY; LEAKAGE CURRENTS; NIOBIUM COMPOUNDS; SUPERCONDUCTING MATERIALS; TRANSISTORS;

JOSEPHSON JUNCTION DEVICES;

EID: 20444490736     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1855399     Document Type: Article

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