Circuit with small-capacitance high-quality Nb Josephson junctions

Applied Physics Letters

Volumn 84, Issue 3, 2004, Pages 410-412

  Watanabe, Michio ^a,c   Nakamura, Yasunobu ^a,b   Tsai, Jaw Shen ^a,b  

^a Japan Science and Technology Agency   (Japan)

^b NEC CORPORATION   (Japan)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FOCUSED-ION-BEAM (FIB) ETCHING; SINGLE-ELECTRON TRANSISTORS (SET);

ALUMINUM; CAPACITANCE; DEGREES OF FREEDOM (MECHANICS); ELECTRON TUNNELING; ETCHING; ION BEAMS; JOSEPHSON JUNCTION DEVICES; NANOTECHNOLOGY; NIOBIUM; SUPERCONDUCTING TRANSITION TEMPERATURE; TRANSISTORS;

TUNNEL JUNCTIONS;

EID: 1242310262     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1640798     Document Type: Article

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