Single electron transistors with Nb/AlOx/Nb junctions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 2, 2003, Pages 775-780

  Dolata, R ^a   Scherer, H ^a   Zorin, A B ^a   Niemeyer, J ^a  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRON BEAMS; ENERGY GAP; EVAPORATION; GATES (TRANSISTOR); NIOBIUM; POLYETHERS; SEMICONDUCTING GERMANIUM; THERMODYNAMIC STABILITY; TUNNEL JUNCTIONS;

SINGLE ELECTRON TRANSISTORS;

SEMICONDUCTOR JUNCTIONS;

EID: 0037277539     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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