Highly Anisotropic and Corrosionless PtMn Etching using Pulse-Time-Modulated Chlorine Plasma

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 10 B, 2003, Pages

  Samukawa, Seiji ^a   Kumagai, Shinya ^a   Shiraiwa, Toshiaki ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b SONY CORPORATION   (Japan)

Author keywords

Magnetoresistive random access memories (MRAMs); Negative ions; PtMn; Pulse time modulated plasma; Reactive ion etching (RIE); Spin valve materials

Indexed keywords

MAGNETORESISTANCE; PLASMA ETCHING; RANDOM ACCESS STORAGE; REACTIVE ION ETCHING; THIN FILMS;

PULSE TIME MODULATED PLASMA; SPIN VALVE MATERIALS;

METALLIC FILMS;

EID: 0346328622     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1272     Document Type: Article

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