Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO2

Applied Physics Letters

Volumn 90, Issue 13, 2007, Pages

  Stepina, N P ^a   Dvurechenskii, A V ^a   Armbrister, V A ^a   Kesler, V G ^a   Novikov, P L ^a   Gutakovskii, A K ^a   Kirienko, V V ^a   Smagina, Zh V ^a   Groetzschel, R ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; GERMANIUM; ION BEAM ASSISTED DEPOSITION; MONTE CARLO METHODS; NUCLEATION; SILICA; THIN FILMS;

ARRAY DENSITY; ATOM DISPLACEMENT; NANOCRYSTAL SIZE;

NANOCRYSTALS;

EID: 34047145947     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2719163     Document Type: Article

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