Simulation of ion-irradiation stimulated Ge nanocluster formation in gate oxides containing GeO2

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 191, Issue 1-4, 2002, Pages 462-467

  Novikov, Pavel ^a   Heinig, Karl Heinz ^a   Larsen, Arne ^a   Dvurechenskii, Anatoly ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Gate oxide; Ion beam mixing; Nanocluster; Process simulation

Indexed keywords

ANNEALING; COMPUTER SIMULATION; ION BEAMS; IRRADIATION; MONOMERS; MONTE CARLO METHODS; MOSFET DEVICES; OXIDATION; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GERMANIUM;

GATE OXIDES;

NANOSTRUCTURED MATERIALS;

EID: 0036574334     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)00593-1     Document Type: Conference Paper

References (11)