Propagation of ultrasonic waves in bulk gallium nitride (GaN) semiconductor in the presence of high-frequency electric field

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 28, Issue 4, 2005, Pages 500-506

  Mensah, S Y ^a,b   Mensah, N G ^b,c   Elloh, V W ^a,b   Banini, G K ^a   Sam, Frederick ^a   Allotey, F K A ^a,b  

^a UNIVERSITY OF CAPE COAST   (Ghana)

^b ABDUS SALAM INTERNATIONAL CENTRE FOR THEORETICAL PHYSICS   (Italy)

^c Ghana Atomic Energy Commission   (Ghana)

Author keywords

Absorption coefficient; High frequency; Piezoelectric; Ultrasonic

Indexed keywords

ACOUSTIC WAVES; CADMIUM COMPOUNDS; ELECTRIC FIELDS; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM COMPOUNDS; THRESHOLD ELEMENTS; WAVE PROPAGATION;

ABSORPTION COEFFICIENT; HIGH-FREQUENCY; PIEZOELECTRIC; ULTRASONIC;

ULTRASONIC WAVES;

EID: 24144491133     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.05.050     Document Type: Article

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