Critical impact of mask electromagnetic effects on optical proximity corrections performance for 45 nm and beyond

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 1, 2007, Pages 164-168

  Azpiroz, Jaione Tirapu ^a   Rosenbluth, Alan E ^b   Lai, Kafai ^a   Fonseca, Carlos ^a   Yang, Da ^a  

^a IBM RESEARCH   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFRACTIVE OPTICS; GEOMETRICAL OPTICS; OPTICAL PROPERTIES; PHOTOLITHOGRAPHY; TOPOGRAPHY;

ELECTROMAGNETIC SIMULATIONS; INCIDENT POLARIZATION; OPTICAL PROXIMITY CORRECTION;

MAGNETOELECTRIC EFFECTS;

EID: 34047117457     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2429667     Document Type: Article

References (13)

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