Low-temperature hydrophobic silicon wafer bonding

Applied Physics Letters

Volumn 83, Issue 23, 2003, Pages 4767-4769

  Tong, Q Y ^a   Gan, Q ^a,c   Hudson, G ^a   Fountain, G ^a   Enquist, P ^a   Scholz, R ^b   Gosele U ^b  

^a Ziptronix Inc   (United States)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c RTI INTERNATIONAL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING ENERGY; BONDING SURFACES; FRACTURE ENERGY; PLASMA TREATMENT;

AMORPHOUS MATERIALS; ANNEALING; CHEMICAL BONDS; HIGH TEMPERATURE EFFECTS; HYDROPHOBICITY; IMAGING SYSTEMS; INFRARED IMAGING; INTERFACES (MATERIALS); INTERFACIAL ENERGY; ION IMPLANTATION; LOW TEMPERATURE DRYING; REACTIVE ION ETCHING; RECRYSTALLIZATION (METALLURGY); SPUTTER DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM;

SILICON WAFERS;

EID: 0346936427     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1632032     Document Type: Article

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