Characterization of the crystalline quality of β-SiC formed by ion beam synthesis

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 249, Issue 1-2 SPEC. ISS., 2006, Pages 851-855

  Intarasiri, S ^a   Hallen A ^b   Kamwanna, T ^a   Yu, L D ^a   Possnert, G ^c   Singkarat, S ^a  

^a CHIANG MAI UNIVERSITY   (Thailand)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c UPPSALA UNIVERSITY   (Sweden)

Author keywords

Infrared spectroscopy (IR); Ion beam synthesis (IBS); Raman spectroscopy; Rutherford backscattering spectrometry (RBS); Silicon; Silicon carbide (SiC)

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; INFRARED SPECTROSCOPY; ION BEAMS; ION IMPLANTATION; OPTOELECTRONIC DEVICES; RAMAN SCATTERING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON;

ELASTIC RECOIL DETECTION; INFRARED TRANSMITTANCE (IR); ION BEAM SYNTHESIS (IBS); RESIDUAL DAMAGE;

SILICON CARBIDE;

EID: 33745827772     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.03.181     Document Type: Article

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