Interfacial layer bonding and Dielectric properties of Hf-O-N gate dielectric thin films

Materials Research Society Symposium Proceedings

Volumn 917, Issue , 2006, Pages 88-94

  Ramani, Karthik ^a   Essary, Chad Robert ^a   Craciun, Valentin ^a   Singh, Rajiv K ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; DOPING (ADDITIVES); GATE DIELECTRICS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; NITROGEN; PULSED LASER DEPOSITION; ULTRAVIOLET RADIATION;

HAFNIA-SI INTERFACE; INTERFACIAL LAYER; OXIDE THICKNESS;

THIN FILMS;

EID: 33947686421     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0917-e07-02     Document Type: Conference Paper

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