Formation of shallow junctions through BGe molecular ion implantation and rapid thermal annealing

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 219-220, Issue 1-4, 2004, Pages 778-782

  Liang, J H ^a   Sang, Y J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Molecular ion implantation; Radiation enhanced diffusion; RBS with channeling; Shallow junction; SIMS; TEM

Indexed keywords

AMORPHOUS MATERIALS; GERMANIUM; OXYGEN; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY;

MOLECULAR ION IMPLANTATION; RADIATION-ENHANCED DIFFUSION; RBS WITH CHANNELING; SHALLOW JUNCTIONS;

ION IMPLANTATION;

EID: 2342464202     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.01.162     Document Type: Conference Paper

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