An LCD Addressed by a-Si:H TFTs with Peripheral poly-Si TFT Circuits

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 389-392

  Tanaka, T ^a   Asuma, H ^a   Ogawa, K ^a   Shinagawa, Y ^a   Ono, K ^a   Konishi, N ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; POLYSILICON; SILICON NITRIDE; THIN FILM TRANSISTORS; ANNEALING; CHEMICAL VAPOR DEPOSITION; INTEGRATED CIRCUITS; THIN FILM CIRCUITS; TRANSISTORS;

A-SI:H; CONTACT STRUCTURE; FABRICATION PROCESS; GATE INSULATOR; LASER-ANNEALING; ON-OFF RATIO; PLASMA-CVD; POLY-SI TFTS; STAGGERED STRUCTURES; TFT CIRCUITS;

TIMING CIRCUITS; LIQUID CRYSTAL DISPLAYS;

INVERTED STAGGERED STRUCTURE; PERIPHERAL LASER ANNEALING; SIDE CONTACT STRUCTURE;

EID: 0027839373     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. S. Morozumi, K. Oguchi, T. Misawa, R. Arai and H. Ohsima, "4.25-in. and 1.51-in. B/W and full-color LC video displays addressed by poly-Si TFTs", SID 84 Digest, pp316-319 (1984)
2. M. Sasuga, K. Suzuki, M. Satoh, T. Futami and N. Konishi, "10.4-in. diagonal multicolor display using amorphous silicon TFT-LCD", Proc. Japan Display'89, pp510-513 (1989)
3. K. Shimizu, H. Hosoya, O. Sugiura and M. Matsumura, "High mobility bottom gate thin film transistors with laser-recrystallized and hydrogen-radical-annealed poly-silicon films, "Jp. J. Appl. Phys., Vol. 30, pp3704-3709 (1991)
4. K. Ono, K. Ogawa, H. Sakuta and N. Konishi, "Invert staggered polycrystalline silicon thin film transistors fabricated by excimer laser irradiation (in Japanese) ", Trans. IEICE, J76-C-II, pp249-255 (1993)