Selective-area MOVPE fabrication of GaAs hexagonal air-hole arrays on GaAs(111)B substrates using flow-rate modulation mode

Nanotechnology

Volumn 16, Issue 12, 2005, Pages 2954-2957

  Takeda, Junichiro ^a   Akabori, Masashi ^a,c   Motohisa, Junichi ^a   Nötzel, Richard ^b   Fukui, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; DESORPTION; ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE;

AIR-HOLE ARRAYS; FLOW RATE MODULATION EPITAXY MODE; LATERAL OVER-GROWTH (LOG); PHOTONIC CRYSTALS;

ARRAYS;

EID: 27944478086     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/16/12/038     Document Type: Article

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