High-density InSb-based quantum dots emitting in the mid-infrared

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 713-717

  Tasco, V ^a   Deguffroy, N ^a   Baranov, A N ^a   Tournie E ^a   Satpati, B ^b   Trampert, A ^b   Dunaevski, M ^c   Titkov, A ^c  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

A1. Low dimensional structures; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

EPITAXIAL GROWTH; LASER APPLICATIONS; LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS;

ANTIMONIDES; IN-ADATOMS MOBILITY; LOW DIMENSIONAL STRUCTURES; SEMICONDUCTING III-V MATERIALS;

INDIUM COMPOUNDS;

EID: 33947375180     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.09.016     Document Type: Article

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