Surfactant-related growth of InAs1-xSbx quantum structures on InP(0 0 1) by metalorganic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 291, Issue 1, 2006, Pages 154-159

  Kawaguchi, Kenichi ^a   Ekawa, Mitsuru ^a   Akiyama, Tomoyuki ^a   Kuwatsuka, Haruhiko ^a   Sugawara, Mitsuru ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

A3. Low pressure metalorganic vapor phase epitaxy; B1. Nanomaterials; B2. Semiconducting III V materials

Indexed keywords

INDIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PROBABILITY; SEMICONDUCTOR QUANTUM WIRES; SURFACE ACTIVE AGENTS; VAPOR PHASE EPITAXY;

INCORPORATION PROBABILITY; LOW PRESSURE METALORGANIC VAPOR-PHASE EPITAXY; SEMICONDUCTING III-V MATERIALS;

QUANTUM OPTICS;

EID: 33749371217     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.03.012     Document Type: Article

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