Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy

Microelectronic Engineering

Volumn 43-44, Issue , 1998, Pages 85-90

  Tsatsul'nikov, A F ^a   Ivanov, S V ^a   Kop'ev, P S ^a   Krestnikov, I L ^a   Kryganovskii, A K ^a   Ledentsov, N N ^b   Maximov, M V ^a   Mel'tser, B Ya ^a   Nekludov, P V ^a   Suvorova, A A ^a   Titkov, A N ^a   Volovik, B V ^a   Grundmann, M ^b   Bimberg, D ^b   Alferov, Zh I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Atomic force microscopy; Molecular beam epitaxy; Photoluminescence; Quantum dot

Indexed keywords

EID: 0347487338     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00225-1     Document Type: Article

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