A study on maskless selective growth of Mg-doping p-type GaAs using low-energy focused ion beam

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 221-224

  Kim, E M ^a   Gotoh, T ^a   Fukai, M ^a   Suzuki, T ^a   Pak, K ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

A1. Doping; A3. Focused ion beam; A3. Molecular beam epitaxy; A3. Selective epitaxy; B1. Gallium compounds; B2. Semiconducting gallium arsenide

Indexed keywords

CARRIER CONCENTRATION; FOCUSED ION BEAMS; MAGNESIUM; MASKS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

LOW-ENERGY FOCUSED ION BEAMS (FIB); MASKLESS SELECTIVE GROWTH; SELECTIVE EPITAXY; STICKING COEFFICIENT;

SEMICONDUCTOR GROWTH;

EID: 33947325140     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.069     Document Type: Article

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