Maskless selective epitaxy of InxGa1-xAs using low-energy In0.15Ga0.85-FIB and As4 molecular beam

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 610-613

  Cho, D H ^a   Hachiro, M ^a   Abe, Y ^a   Pak, K ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYS; COMPOSITION EFFECTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES;

FOCUSED ION BEAMS (FIB); LIQUID ALLOY ION SOURCE (LAIS); MASKLESS SELECTIVE EPITAXY (MLSE);

MOLECULAR BEAM EPITAXY;

EID: 0032642952     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01421-3     Document Type: Article

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