Selective area epitaxy of GaAs using very low energy Ga+ focused ion beam deposition combined with molecular beam epitaxial growth

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 398-403

  Beere, H E ^a   Thompson, J H ^a   Jones, G A C ^a   Ritchie, D A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DEPOSITION; ION BEAMS; ION BOMBARDMENT; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTOR GROWTH; SUBSTRATES;

FOCUSED ION BEAM (FIB) DEPOSITION; HALL MOBILITY; SELECTIVE AREA EPITAXY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031142815     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01028-7     Document Type: Article

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