Maskless selective growth and in situ beryllium-doping of GaAs grown by low-energy focused ion beam

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Kim, E M ^a   Nishiyama, T ^a   Numata, K ^a   Itoh, S ^a   Gotoh, T ^a   Pak, K ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

A1. Doping; A3. Focused ion beam; A3. Molecular beam epitaxy; A3. Selective epitaxy; B1. Gallium compounds; B2. Semiconducting gallium asenide

Indexed keywords

BERYLLIUM; DOPING (ADDITIVES); GALLIUM COMPOUNDS; ION BEAMS; OPTOELECTRONIC DEVICES; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; ULTRAHIGH VACUUM;

DAMAGE-FREE INTERFACES; FOCUSED ION BEAMS (FIB); MICRO-DEVICE FABRICATION; SELECTIVE EPITAXY;

CRYSTAL GROWTH;

EID: 15944389472     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.153     Document Type: Conference Paper

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