Maskless selective epitaxy of GaN by Ga low energy focused ion beam and dimethylhydrazine

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1461-1466

  Cho, D H ^a   Tanaka, M ^a   Pak, K ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FILM GROWTH; HYDRAZINE; ION BEAMS; ION BOMBARDMENT; NITRIDES; NITRIDING; PRESSURE EFFECTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

FOCUSED ION BEAM (FIB) METHOD; GALLIUM NITRIDE; MASKLESS SELECTIVE EPITAXY;

SEMICONDUCTING FILMS;

EID: 0034187783     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591404     Document Type: Article

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