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Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 476-480

Maskless selective epitaxy of InGaN by an InGa low energy focused ion beam and dimethylhydrazine

(3) Cho, D H a Tanaka, M a Pak, K a

a TOYOHASHI UNIVERSITY OF TECHNOLOGY (Japan)

Author keywords

A3. Selective epitaxy; B1. Nitrides; B2. Semiconducting indium compounds

Indexed keywords

CRYSTAL MICROSTRUCTURE; FOCUSING; ION BEAMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

LOW ENERGY FOCUSED ION BEAMS; MASKLESS SELECTIVE EPITAXIAL FILMS;

SEMICONDUCTING FILMS;

EID: 0035399115 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00746-1 Document Type: Conference Paper

Times cited : (5)

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