Maskless selective direct growth and doping of GaAs using a Ga-Sn low energy focused ion beam for in-situ micro-device structures fabrication

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 II, 2002, Pages 1455-1459

  Cho, D H ^a   Suzuki, Y ^a   Tanaka, M ^a   Hachiro, M ^a   Pak, K ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

A1. Doping; A3. Focused ion beam; A3. Molecular beam epitaxy; A3. Selective epitaxy; B1. Gallium compounds; B2. Semiconducting gallium arsenide

Indexed keywords

CRYSTALLIZATION; ELECTRIC PROPERTIES; ION BEAMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; THIN FILMS;

FOCUSSED ION BEAMS; ION BEAM RESOLUTION; SELECTIVE EPITAXY;

EPITAXIAL GROWTH;

EID: 0036531469     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02288-6     Document Type: Article

References (10)