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Volumn 301-302, Issue SPEC. ISS., 2007, Pages 125-128

Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 μ m grown by molecular beam epitaxy

Author keywords

A3. Quantum wells; B3. Laser

Indexed keywords

ELECTRON EMISSION; EPITAXIAL GROWTH; GROWTH TEMPERATURE; MOLECULAR BEAM EPITAXY; PHASE SEPARATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN RELAXATION;

EID: 33947319953     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.172     Document Type: Article
Times cited : (7)

References (16)
  • 12
    • 33947317565 scopus 로고    scopus 로고
    • V. Gambin, Long wavelength luminescence from GaInNAsSb on GaAs, D.Phil. Dissertation, Standford University, Standford, 2003.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.