Effects of V/III ratio on photoluminescence spectra of Eu-doped GaN grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 420-423

  Sawahata, Junji ^a   Seo, Jongwon ^a   Takiguchi, Mikio ^a   Saito, Daisuke ^a   Nemoto, Shinya ^a   Akimoto, Katsuhiro ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

A1. Crystal structure; A3. Molecular beam epitaxy; B1. Nitrides; B1. Rare earth compounds

Indexed keywords

CRYSTAL STRUCTURE; DOPING (ADDITIVES); EPITAXIAL GROWTH; EUROPIUM; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RARE EARTH COMPOUNDS;

BELOW-GAP EXCITATIONS; LUMINESCENCE PEAKS; V/III RATIO;

GALLIUM NITRIDE;

EID: 33947318229     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.102     Document Type: Article

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