GaN quantum dots doped with Tb

Applied Physics Letters

Volumn 88, Issue 5, 2006, Pages 1-3

  Hori, Y ^a   Andreev, T ^a   Jalabert, D ^a   Monroy, E ^a   Dang, Le Si ^b   Daudin, B ^b   Tanaka, M ^c   Oda, O ^c  

^a CEA GRENOBLE   (France)

^b UNIV GRENOBLE ALPES   (France)

^c NGK INSULATORS LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POSITIVE IONS; TERBIUM;

ADATOMS; GROWTH RATES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 32044450327     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2168504     Document Type: Article

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