Effect of V/III ratio on the optical properties of Eu-doped GaN

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1911-1914

  Sawahata, J ^a   Seo, J W ^a   Takiguchi, M ^a   Saito, D ^a   Nemoto, S ^a   Akimoto, K ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EU CONCENTRATION; NITROGEN SOURCE; NITROGEN VACANCY; 68.55.LN; 78.55.CR; 81.05.EA; 81.15.HI; EU-DOPED GAN; NITROGEN SOURCES; NITROGEN VACANCIES; V/III RATIO;

CONCENTRATION (PROCESS); ENERGY TRANSFER; ERBIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; NITROGEN; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; GALLIUM NITRIDE;

GALLIUM NITRIDE; EUROPIUM;

EID: 33746455174     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565337     Document Type: Conference Paper

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