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Volumn 226, Issue 1-2, 1998, Pages 192-199

Defect-related Auger excitation of erbium ions in amorphous silicon

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRIC EXCITATION; ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; PHONONS; PHOTOLUMINESCENCE; QUENCHING;

EID: 0032074342     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00357-3     Document Type: Article
Times cited : (28)

References (13)
  • 2
    • 0004115754 scopus 로고    scopus 로고
    • Progress Technology for Semiconductor Lasers
    • Springer-Verlag, Berlin
    • K. Iga, S. Kinoshita, Progress Technology for Semiconductor Lasers, Springer Ser. in Mater. Sci., Vol. 30, Springer-Verlag, Berlin, 1996.
    • (1996) Springer Ser. in Mater. Sci. , vol.30
    • Iga, K.1    Kinoshita, S.2
  • 11
    • 0003370986 scopus 로고
    • Nonradiative recombination in semiconductors
    • V.M. Agranovich, A.A. Maradudin (Eds.), North-Holland, Amsterdam
    • V.N. Abakumov, V.I. Perel, I.N. Yassievich, Nonradiative recombination in semiconductors, in: V.M. Agranovich, A.A. Maradudin (Eds.), Modern Problems in Solid State Sciences, Vol. 33, North-Holland, Amsterdam, 1991.
    • (1991) Modern Problems in Solid State Sciences , vol.33
    • Abakumov, V.N.1    Perel, V.I.2    Yassievich, I.N.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.