Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface

Superlattices and Microstructures

Volumn 37, Issue 6, 2005, Pages 401-409

  Tan, Shih Wei ^a   Chen, Hon Ren ^b   Chu, Min Yuan ^a   Chen, Wei Tien ^a   Lin, An Hung ^a   Hsu, Meng Kai ^a   Lin, Tien Sheng ^a   Lour, Wen Shiung ^a  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

Current gain; Heterojunction; InGaP GaAs; Sulfur treatment

Indexed keywords

ELECTRIC RESISTANCE; GAIN MEASUREMENT; LEAKAGE CURRENTS; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

CURRENT GAIN; INGAP/GAAS; SHEET RESISTANCE; SULFUR TREATMENT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 18544386699     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2005.02.002     Document Type: Article

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