Comprehensive study of an InGaP/AlGaAs/GaAs heterojunction bipolar transistor with a continuous conduction-band structure

Semiconductor Science and Technology

Volumn 17, Issue 7, 2002, Pages 701-707

  Cheng, Shiou Ying ^a  

^a ORIENTAL INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPOSITION; MICROWAVE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

ALUMINUM GALLIUM ARSENIDE; CONTINUOUS CONDUCTION BAND STRUCTURE; INDIUM GALLIUM PHOSPHIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036641856     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/17/7/312     Document Type: Article

References (17)

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3. Band lineup for a GaInP/GaAs heterojunction measured by a high-gain Npn heterojunction bipolar transistor grown by metalorganic chemical vapor deposition
4. Influence of δ-doping sheet and setback layer on the performance of InGaP/GaAs heterojunction bipolar transistor
5. 0.5P/GaAsA single- and double-heterojunction bipolar transistors with a carbon-doped base
6. InGaP/GaAs/InGaP double heterostructure bipolar transistors with carbon-doped based grown by CBE
7. Determination of valence and conduction-band discontinuities at the (Ga,In)P/GaAs heterojunction by C-V profiling
8. Heterojunction bipolar transistor with emitter barrier lowered by δ-doping
9. Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistors
10. Comparison of GaInP/GaAs heterostructure-emitter bipolar transistors and heterojunction bipolar transistors
11. 1-xAs/GaAs heterojunction bipolar transistors
12. An analytical model for current transport in AlGaAs/GaAs abrupt HBTs with a setback layer
13. 1-xAs heterojunction by photoluminescence measurement
14. 1-xAs from capacitance-voltage analysis
15. Direct measurement of the potential spike energy in AlGaAs/GaAs single-heterojunction bipolar transistors