Improved dc and microwave performance of heterojunction bipolar transistors by full sulfur passivation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 2, 2006, Pages 669-674

  Cheng, Shiou Ying ^a   Fu, Ssu I ^b   Chu, Kuei Yi ^a   Lai, Po Hsien ^b   Chen, Li Yang ^a   Liu, Wen Chau ^b   Chiang, Meng Hsueh ^a  

^a NATIONAL ILAN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; INDIUM ALLOYS; MICROWAVES; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SULFUR; TEMPERATURE;

DC PERFORMANCE; FULL SULFUR PASSIVATION; LOWER SHEET RESISTANCE; MICROWAVE PERFORMANCE; SPECIFIC CONTACT RESISTANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33645548089     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2178370     Document Type: Article

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