Influences of surface sulfur treatments on the temperature-dependent characteristics of HBTs

IEEE Transactions on Electron Devices

Volumn 51, Issue 12, 2004, Pages 1963-1971

  Chen, Chun Yuan ^a   Fu, Ssu I ^a   Cheng, Shiou Ying ^b   Chang, Chi Yuan ^a   Tsai, Ching Hsiu ^a   Yen, Chih Hung ^a   Tsai, Sheng Fu ^a   Liu, Rong Chau ^c   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL ILAN UNIVERSITY   (Taiwan)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Current gain; Offset voltage; Sulfur treatment; Temperature dependent characteristics

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; PASSIVATION; SEMICONDUCTING INDIUM COMPOUNDS; SULFUR; SURFACE TREATMENT; THERMAL EFFECTS;

CURRENT GAIN; OFFSET VOLTAGE; SULFUR TREATMENT; TEMPERATURE DEPENDENT CHARACTERISTICS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 10644275304     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.839121     Document Type: Article

References (19)

1. J. N. Burghartz, S. R. Mader, B. J. Ginsberg, B. S. Meyerson, J. M. C. Stork, C. L. Stanis, U. Y. C. Sun, and M. R. Polcari, "Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technology," IEEE Trans. Electron Devices., vol. 38, pp. 378-385, Mar. 1991.
2. H. R. Chen, C. Y. Chang, C. P. Lee, C. H. Huang, J. S. Tsang, and K. L. Tsai, "High current gain, low offset voltage heterostructure emitter bipolar transistors, IEEE Electron Device Lett., vol. 15, pp. 336-338, Jun. 1994.
3. J. C. Fan, C. P. Lee, J. A. Hwang, and J. H. Hwang, "AlGaAs/GaAs heterojunction bipolar transistor on Si substrate using epitaxial lift-off," IEEE Electron Device Lett., vol. 16, pp. 393-395, Jun. 1995.
4. M. M. Jahan and A. F. M. Anwar, "Junction temperature dependence of high-frequency noise in heterojunction bipolar transistors," IEEE Electron Device Lett., vol. 16, pp. 551-553, Sep. 1995.
5. M. M. Jahan and A. F. M. Anwar, "Early voltage in double heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 42, pp. 2028-2029, Dec. 1995.
6. W. S. Lour, "High-gain, low offset voltage, and zero potential spike by InGaP/GaAs ddoped single heterojunction bipolar transistor (δ-SHBT)," IEEE Trans. Electron Devices, vol. 44, pp. 346-348, 1997.
7. C. Y. Chen, W. H. Chiou, C. H. Yen, H. M. Chuang, J. Y. Chen, C. C. Cheng, and W. C. Liu, "Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures," J. Vac. Sci. Technol., vol. 21, pp. 82-86, 2003.
8. C. Y. Chen, S. Y. Cheng, W. H. Chiou, H. M. Chuang, R. C. Liu, C. H. Yen, J. Y. Chen, C. C. Cheng, and W. C. Liu, "DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)," IEEE Trans. Electron Devices, vol. 50, pp. 874-879, Aug. 2003.
9. 1-x As graded layers," Semicond. Sci. Technol., vol. 19, pp. 351-358, 2004.
10. B. J. Skromme, C. J. Sandroff, E. Tablonovitch, and T. Gmitter, "Effects of passivation ionic films on the photoluminescence properties of GaAs," Appl. Phys. Lett., vol. 51, pp. 2022-2024, 1987.
11. 0.47 As surfaces," Appl. Phys. Lett., vol. 60, pp. 371-373, 1992.
12. M. Borgarino, R. Plana, S. L. Delage, F. Fantini, and J. Graffeuil, "Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's, IEEE Trans. Electron Devices, vol. 46, pp. 10-16, Jan. 1999.
13. R. Lyer, R. R. Chang, and D. L. Lile, "Sulfur as a surface passivation for InP," Appl. Phys. Lett., vol. 53, pp. 134-136, 1988.
14. R. Driad, Z. H. Lu, S. Charbonneau, W. R. McKinnon, S. Laframoboise, P. J. Poole, and S. P. McKinnon, "Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment," Appl. Phys. Lett., vol. 73, pp. 665-667, 1998.
15. K. Ikossi-Anastasiou, A. Ezis, K. R. Evans, and C. E. Stutz, "Low-temperature characterization of high-current-gain graded-emitter AlGaAs/GaAs narrow-base heterojunction bipolar transistor," IEEE Electron Device Lett., vol. 13, pp. 414-417, May 1992.
16. N. Hayama and K. Honjo, "Emitter size effect on current gain in fully self-aligned AlGaAs/GaAs HBT's with AlGaAs surface passivation layer," IEEE Electron Device Lett., vol. 11, pp. 388-390, May 1990.
17. W. Liu and J. S. Harris Jr, "Diode ideality factor for surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 39, pp. 2726-2732, Dec. 1992.
18. Y. F. Yang, C. C. Hsu, and E. S. Yang, "Surface recombination current in InGaP/GaAs heterojunction-emitter bipolar transistors," IEEE Trans. Electron Devices, vol. 41, pp. 643-647, Jun. 1994.
19. S. Y. Deng, C. H. Wu, and J. Y. M. Lee, "A study on the transient effect due to hydrogen passivation in InGaP HBTs," IEEE Electron Device Lett., vol. 24, pp. 372-374, May 2003.