![]() |
Volumn 27, Issue 12, 2006, Pages 945-947
|
Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHFET layer structures
|
Author keywords
Gallium nitride; Metal insulator semiconductor (MIS) devices; Metal oxide semiconductor heterojunction field effect transistors (MOSHFETs); Metal semiconductor metal (MSM) devices; Modulation doped field effect transistors (MODFETs); Varactors
|
Indexed keywords
CAPACITANCE;
CUTOFF FREQUENCY;
FIELD EFFECT TRANSISTORS;
MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;
MOSFET DEVICES;
SEMICONDUCTING GALLIUM COMPOUNDS;
CAPACITANCE RATIOS;
CUTOFF FREQUENCIES;
METAL-INSULATOR-SEMICONDUCTOR (MIS) DEVICES;
METAL-SEMICONDUCTOR-METAL (MSM) DEVICES;
MODULATION-DOPED FIELD-EEFECT TRANSISTORS (MODFETS);
VARACTORS;
|
EID: 33947197282
PISSN: 07413106
EISSN: None
Source Type: Journal
DOI: 10.1109/LED.2006.886705 Document Type: Article |
Times cited : (31)
|
References (8)
|