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Volumn 27, Issue 12, 2006, Pages 945-947

Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHFET layer structures

Author keywords

Gallium nitride; Metal insulator semiconductor (MIS) devices; Metal oxide semiconductor heterojunction field effect transistors (MOSHFETs); Metal semiconductor metal (MSM) devices; Modulation doped field effect transistors (MODFETs); Varactors

Indexed keywords

CAPACITANCE; CUTOFF FREQUENCY; FIELD EFFECT TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; MOSFET DEVICES; SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33947197282     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.886705     Document Type: Article
Times cited : (31)

References (8)
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  • 4
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    • Feb
    • Y. C. Pao, J. Franklin, and C. Yuen, "Selective InAlAs/InGaAs MBE growth for high frequency OEIC applications," J. Cryst. Growth, vol. 127, no. 1-4, pp. 892-895, Feb. 1993.
    • (1993) J. Cryst. Growth , vol.127 , Issue.1-4 , pp. 892-895
    • Pao, Y.C.1    Franklin, J.2    Yuen, C.3
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    • 0032163324 scopus 로고    scopus 로고
    • "High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors"
    • Sep
    • V. Duez, X. Mélique, O. Vanbésien, P.Mounaix, F.Mollot, and D. Lippens, "High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors," Electron. Lett., vol. 34, no. 19, pp. 1860-1861, Sep. 1998.
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    • Duez, V.1    Mélique, X.2    Vanbésien, O.3    Mounaix, P.4    Mollot, F.5    Lippens, D.6
  • 7
    • 13444252848 scopus 로고    scopus 로고
    • "High-power RF switching using III-nitride metal-oxide-semiconductor heterojunction capacitors"
    • Feb
    • G. Simin, A. Koudymov, Z.-J. Yang, V. Adivarahan, J. Yang, and M. A. Khan, "High-power RF switching using III-nitride metal-oxide-semiconductor heterojunction capacitors," IEEE Electron Device Lett., vol. 26, no. 2, pp. 56-58, Feb. 2005.
    • (2005) IEEE Electron Device Lett. , vol.26 , Issue.2 , pp. 56-58
    • Simin, G.1    Koudymov, A.2    Yang, Z.-J.3    Adivarahan, V.4    Yang, J.5    Khan, M.A.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.