16GHz bandwidth MSM photodetector and 45/85GHz fT/fmax HEMT prepared on an identical InGaAs/InP layer structure

Electronics Letters

Volumn 32, Issue 8, 1996, Pages 763-764

  Horstmann, M ^a   Schimpf, K ^a   Marso, M ^a   Fox, A ^a   Kordos P ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Gallium indium arsenide; Metal semiconductor metal structures; Photodelectors

Indexed keywords

BANDWIDTH; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; FREQUENCIES; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; OHMIC CONTACTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

CUTOFF FREQUENCY; GATE TO CHANNEL ASPECT RATIO; MESA ETCHING; MONOLITHICALLY INTEGRATED PHOTORECEIVER; OPTICAL LITHOGRAPHY; TWO DIMENSIONAL ELECTRON GAS;

PHOTODETECTORS;

EID: 0030129907     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960454     Document Type: Article

References (8)

1. KUHL, D., BÖTTCHER, E.H., HIERONYMI, F., DRÖGE, E., and BIMBERG, D.: 'Inductive bandwidth enhancement of sub-μm InAlAs-InGaAs MSM photodetectors', IEEE Photonics Technol. Lett., 1995, 7, pp. 421-423
2. KLEPSER, B.-U., SPICHER, J., BECK, M., BERGAMASCHI, C., PATRICK, W., and BÄCHTOLD, W.: 'High speed, monolithically integrated pin-HEMT photoreceiver fabricated on InP with 18GHz bandwidth', Electron. Lett., 1995, 31, pp. 1831-1833
3. SANO, E., YONEYAMA, M., YAMAHATA, S., and MATSUOKA, Y.: '23GHz bandwidth monolithic photoreceiver compatible with InP/InGaAs heterojunction bipolar transistor fabrication process', Electron. Lett., 1994, 30, pp. 2064-2065
4. KORDOS, P., MARSO, M., FOX, A., MEYER, R., HARDTDEGEN, H., and LÜTH, H.: 'n-InGaAs Schottky diode with current transport along 2-DEG channel', Electron. Lett., 1992, 28, pp. 1689-1690
5. HORSTMANN, M., MARSO, M., HOX, A., RÜDERS, F., HOLLFELDER, M., HARDTDEGEN, H., KORDOS, P., and LÜTH, H.: 'InP/InGaAs photodetector based on a high electron mobility transistor layer structure: its response at 1.3 μm wavelength', Appl. Phys. Lett., 1995, 67, pp. 106-108
6. MEYER, R., HARDTDEGEN, H., LEUTHER, A., MARSO, M., KORDOS, P., and LÜTH, H.: 'Optimization of strained GaInAs/InP heterostructures towards high channel conductivity for HEMT application'. Proc. 5th Int. Conf. InP and Related Materials, 1993, pp. 485-488
7. KRUPPA, W., and BOOS, J.B.: 'Examination of the kink effect in InAlAs/InGaAs/InP HEMTs using sinusoidal and transient excitation', IEEE Trans. Electron. Devices, 1995, 42, pp. 1717-1723
8. MARSO, M., SCHIMPF, K., FOX, A., VAN DER HART, A., HARDTDEGEN, H., HOLLFELDER, M., KORDOS, P., and LÜTH, H.: 'Novel HEMT layout: The round HEMT', Electron. Lett., 1995, 31, pp. 589-591