High capacitance ratio with GaAs/InGaAs/ AlAs heterostructure quantum well-barrier varactors

Electronics Letters

Volumn 34, Issue 19, 1998, Pages 1860-1861

  Duez, V ^a   Melique X ^a   Vanbesien O ^a   Mounaix, P ^a   Mollot, F ^a   Lippens, D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; EIGENVALUES AND EIGENFUNCTIONS; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

GAS SOURCE MOLECULAR BEAM EPITAXY RIBER (GSMBE) SYSTEM; HETEROSTRUCTURE BARRIER VARACTORS;

VARACTORS;

EID: 0032163324     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981328     Document Type: Article

References (5)

1. KRISNAMURTHI, K., and HARRISON, R.G.: 'Milimeter-wave frequency tripling using stacked heterostructure-barrier varactor on InP', IEE Proc. Microw. Antennas Propag., 1996, 143, (4), pp. 272-276
2. RAHAL, A., BOSISIO, R.G., ROGERS, C., OVEY, J., SAWAN, M., and MISSOUS, M.: 'A W-band medium power multistack quantum barrier varactor frequency tripler', IEEE Microw. Guid. Wave Lett., 1995, 5, (11), pp. 368-370
3. MÉLIQUE, X., MANN, C., MOUNAIX, P., VANBÉSIEN, O., MOLLOT, F., and LIPPENS, D.: '5mW and 5% efficiency 216GHz InP-based heterostructure barrier varactor tripler', submitted to IEEE Microw. Guid. Wave Lett.
4. STAKES, J., DILLNER, L., JONES, S.H., MANN, C., THORNTON, J., JONES, J.R., BISHOP, W., and KOLLBERG, E.: 'Effects of self heating on planar heterostructure barrier varactor', submitted to IEEE Trans. Electron Devices
5. MÉLIQUE, X., CARBONELL, J., HAVART, R., MOUNAIX, P., VANBÉSIEN, O., and LIPPENS, D.: 'InGaAs/InAlAs/AlAs heterostructure barrier varactors for harmonic multiplication', IEEE Microw. Guid. Wave Lett., 1998, 8, (7), pp. 254-256