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Volumn 88, Issue 15, 2006, Pages

High-temperature interstitial oxygen diffusion retardation in epitaxial-layered heavily arsenic- or boron-doped Czochralski silicon wafers

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC SUBSTRATE; CZOCHRALSKI SILICON WAFERS; DIFFUSION RETARDATION;

EID: 33646148471     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2195099     Document Type: Article
Times cited : (3)

References (15)
  • 3
    • 0006235897 scopus 로고
    • edited by S. J.Pearton, J. W.Corbett, and S. J.Pennycock (Materials Research Society, Pittsburgh
    • J. C. Mikkelsen, Jr. in Oxygen, Carbon, Hydrogen and Nitrogen in Crystal Silicon, edited by, S. J. Pearton, J. W. Corbett, and, S. J. Pennycock, (Materials Research Society, Pittsburgh, 1986) p. 19.
    • (1986) Oxygen, Carbon, Hydrogen and Nitrogen in Crystal Silicon , pp. 19
    • Mikkelsen Jr., J.C.1
  • 6
    • 0006767663 scopus 로고
    • edited by R. B.Fair, C.Pearce, and J.Washburn (Materials Research Society, Pittsburgh
    • U. Gösele and T. Y. Tan, in Impurity Diffusion and Gettering in Silicon, edited by, R. B. Fair, C. Pearce, and, J. Washburn, (Materials Research Society, Pittsburgh, 1985), p. 105.
    • (1985) Impurity Diffusion and Gettering in Silicon , pp. 105
    • Gösele, U.1    Tan, T.Y.2
  • 13
    • 0003827024 scopus 로고
    • edited by E.Kaser and J. C.Bean (CRC, Boca Raton, FL
    • J. C. Bean, in Silicon Molecular Beam Epitaxy, edited by, E. Kaser, and, J. C. Bean, (CRC, Boca Raton, FL, 1988).
    • (1988) Silicon Molecular Beam Epitaxy
    • Bean, J.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.