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Volumn 88, Issue 15, 2006, Pages
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High-temperature interstitial oxygen diffusion retardation in epitaxial-layered heavily arsenic- or boron-doped Czochralski silicon wafers
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Author keywords
[No Author keywords available]
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Indexed keywords
ARSENIC SUBSTRATE;
CZOCHRALSKI SILICON WAFERS;
DIFFUSION RETARDATION;
ARSENIC;
BORON;
DIFFUSION;
DOPING (ADDITIVES);
EPITAXIAL GROWTH;
HIGH TEMPERATURE APPLICATIONS;
OXYGEN;
SILICON WAFERS;
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EID: 33646148471
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2195099 Document Type: Article |
Times cited : (3)
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References (15)
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