Use of WNx as diffusion barrier for copper airbridged low noise GaAs PHEMT

Electronics Letters

Volumn 39, Issue 24, 2003, Pages 1763-1765

  Chang, H C ^a   Chang, E Y ^a   Lien, Y C ^a   Chu, L H ^a   Chang, S W ^a   Huang, R C ^a   Lee, H M ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SPUTTERING;

COPPER AIRBRIDGE; DIFFUSION BARRIER; LOW NOISE TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0345566221     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20031133     Document Type: Article

References (6)

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2. Holloway, K., et al.: 'Tantalum as a diffusion barrier between copper and silicon: failure mechanism and effect of nitrogen additions', J. Appl. Phys., 1992, 71, (11), pp. 5433-5444
3. Yoon, D.S., Baik, H.K., and Lee, S.M.: 'Effect on thermal stability of a Cu/Ta/Si heterostructure of the incorporation of cerium oxide into the Ta barrier', J. Appl. Phys., 1998, 83, (12), pp. 8074-8076
4. Chen, C.Y., et al.: 'Thermal stability of Cu/Ta/GaAs multilayers', Appl. Phys. Lett., 2000, 77, (21), pp. 3367-3369
5. Chen, C.Y., et al.: 'Backside copper metallisation of GaAs MESFETs', Electron. Lett., 2000, 36, (15), pp. 1318-1319
6. Chen, C.Y., et al.: 'Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier', IEEE Trans. Electron Devices, 2001, 48, (6), pp. 1033-1036