Reliability evaluation on dual-etch-stop InGaAs PHEMTs

GaAs Reliability Workshop, Proceedings

Volumn 2002-January, Issue , 2002, Pages 95-97

  Gao, Frank ^a  

^a SKYWORKS SOLUTIONS INC   (United States)

Author keywords

Electron mobility; HEMTs; Indium gallium arsenide; Materials reliability; MESFETs; MODFETs; PHEMTs; Switches; Telecommunication switching; Thermal stresses

Indexed keywords

ACTIVATION ANALYSIS; ACTIVATION ENERGY; ELECTRON MOBILITY; GALLIUM ARSENIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; MESFET DEVICES; MICROWAVE AMPLIFIERS; MODFETS; POWER AMPLIFIERS; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SWITCHES; THERMAL STRESS;

HIGH TEMPERATURE OPERATING LIVES; INDIUM GALLIUM ARSENIDE; MATERIALS RELIABILITIES; MESFETS; PHEMTS; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; SINGLE-POLE DOUBLE-THROW SWITCHES; TELECOMMUNICATION APPLICATIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33847701682     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GAAS.2002.1167927     Document Type: Conference Paper

References (5)

1. Frank Gao, Ravi Chanana, and Tom Nicholls, "The effects of buffer thickness on GaAs MESFET Characteristics: channel-substrate current, drain breakdown, and reliability," Microelecironics Reliabilify, Vol. 42, pp. 1003-1010, 2002.
2. David S. Whitefield, A.E. Geissberger, D.C. Jorgenson, S.G. Munro, and S.W. Walker, "Material and process reliability survey using on-wafer step-stressing," GaAs Reliability Workshop Proceedings, Session IV, Philadelphia, October 1994.
3. H.F. Cooke, "Precise Technique Finds FET Thermal Resistance," Microwaves and RF, Aug. 1986, pp. 85-87.
4. P.A. Tobias and D. Trindade, "Applied Reliability," Van Nostrand Reinhold, New York (1986).
5. Frank Gao and Peter Enland, "Accelerated Lifetests for High-speed 0.5-μm InGaAs PHEMT Switches," 1999 Internaiional Conference on GaAs Manufacturing Technology, Vancouver, Canada, April, 1999, pp. 109-112.