Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier

IEEE Transactions on Electron Devices

Volumn 48, Issue 6, 2001, Pages 1033-1036

  Chen, C Y ^a   Chang, E Y ^a   Chang, L ^a   Chen, S H ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Copper; GaAs MESFET; Metallization; TaN

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; COPPER PLATING; ELECTRIC BREAKDOWN OF SOLIDS; INTERDIFFUSION (SOLIDS); METALLIZING; PHASE SEPARATION; SEMICONDUCTING GALLIUM ARSENIDE; TANTALUM COMPOUNDS; THERMAL STRESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BACKSIDE COPPER METALLIZATION; DIFFUSION BARRIER;

MESFET DEVICES;

EID: 0035367201     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.925222     Document Type: Article

References (8)

1. Tantalum as a diffusion barrier between copper and silicon
2. Diffusion in several materials relevant to Cu interconnection technology
3. Nanostructured Ta-Si-N diffusion barriers for Cu metallization
4. Transition metals in silicon
5. Formation, oxidation, electronic, and electrical properties of copper silicides
6. Formation of copper silicides from Cu(100)/Si(100) and Cu(111)/Si(111) structures