Coulomb blockade anisotropic magnetoresistance and voltage controlled magnetic switching in a ferromagnetic GaMnAs single electron transistor

Journal of Magnetism and Magnetic Materials

Volumn 310, Issue 2 SUPPL. PART 3, 2007, Pages 1883-1888

  Wunderlich, J ^a   Jungwirth, T ^b,c   Irvine, A C ^d   Kaestner, B ^e   Shick, A B ^b   Campion, R P ^c   Williams, D A ^a   Gallagher, B L ^c  

^a HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

^b INSTITUTE OF PHYSICS   (Czech Republic)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^e NATIONAL PHYSICAL LABORATORY   (United Kingdom)

Author keywords

Coulomb blockade; Magnetic semiconductors; Magnetotransport phenomena; Materials for magnetotransport; Single electron tunneling; Spin polarized resonant tunnel junctions

Indexed keywords

ELECTRON TUNNELING; FERROMAGNETIC MATERIALS; GALVANOMAGNETIC EFFECTS; GATES (TRANSISTOR); MAGNETIC SEMICONDUCTORS; MAGNETIZATION; MAGNETORESISTANCE; SEMICONDUCTING GALLIUM COMPOUNDS; SPIN POLARIZATION; TUNNEL JUNCTIONS; VOLTAGE CONTROL;

ANISOTROPIC MAGNETORESISTANCE; GATE VOLTAGE; SINGLE ELECTRON TRANSISTORS; SPIN POLARIZED RESONANT TUNNEL JUNCTIONS; VOLTAGE CONTROLLED MAGNETIC SWITCHING;

COULOMB BLOCKADE;

EID: 33847643192     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2006.10.676     Document Type: Article

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