Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 1032-1036

  Matsukura, F ^a,b,c   Sawicki, M ^a   Dietl, T ^a,c   Chiba, D ^b   Ohno, H ^b,c  

^a INSTITUTE OF PHYSICS   (Poland)

^b TOHOKU UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

(Ga; Ferromagnetic semiconductors; Magnetic anisotropy; Magnetoresistance; Mn)As; Weak localization

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; MAGNETIC ANISOTROPY; MAGNETIZATION; MAGNETORESISTANCE; SEMICONDUCTING FILMS; STRAIN;

(GA,MN)AS; FERROMAGNETIC SEMICONDUCTORS; WEAK LOCALIZATION;

METALLIC FILMS;

EID: 1642565443     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.165     Document Type: Conference Paper

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