The features and characteristics of 5M CMOS image sensor with 1.9×1.9μm2 pixels

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 795-798

  Moon, Chang Rok ^a   Jung, Jongwan ^a   Kwon, Doowon ^a   Lee, Seok Ha ^a   Roh, Jae Seob ^a   Paik, Kee Hyun ^a   Park, Doo Cheol ^a   Kim, HongKi ^a   Jeong, Heegeun ^a   Sim, Jae Hwang ^a   Noh, Hyunpil ^a   Lee, Kangbok ^a   Lee, Duckhyung ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; IMAGE SENSORS; PIXELS; SPURIOUS SIGNAL NOISE;

CMOS IMAGE SENSOR CHIPS; EPITAXIAL LAYER; PITCH PIXELS;

CMOS INTEGRATED CIRCUITS;

EID: 33847362578     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. M. Oda, T. Kaida, S. Izawa, T. Ogo, K. Itsumi, Y. Okada, and K. Sasada, "A 1/4.5in 3.1M Pixel FT-CCD with 1.56μm Pixel Size for Mobile Applications," ISSCC Dig. Tech. Papers, pp. 346-347, February 2005.
2. G. Agranov, T. Gilton, R. Mauritzson, U. Boettiger, P. Altice, J. Shah, J. Ladd, X. Fan, F. Brady, J. McKee, C. Hong, X. Li, I. Patrick, "Optical-electrical characteristics of small, sub-4μm and sub-3μm pixels for modern CMOS Image Sensors," IEEE Workshop on CCD and AIS, pp. 206-209, June 2005.
3. H. Noh, K. Lee, D. Lee, and K. Kim, "The design and characterization of CMOS image sensor with active pixel array of 2.0μm pitch and beyond," IEEE Workshop on CCD and AIS, pp. 197-200, June 2005.