The features and characteristics of 5-mega CMOS image sensor with topologically unique 1.7μm×1.7μm pixels

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 142-143

  Lee, Seok Ha ^a   Moon, Chang Rok ^a   Paik, Kee Hyun ^a   Hwang, Sung Ho ^a   Shin, Jong Cheol ^a   Jung, Jongwan ^a   Lee, Kangbok ^a   Noh, Hyunpil ^a   Lee, Duckhyung ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

CMOS image sensor; Photo diode; Saturation sensitivity and crosstalk

Indexed keywords

ASPECT RATIO; CMOS INTEGRATED CIRCUITS; CROSSTALK; OPTIMIZATION; PHOTODIODES; PIXELS; SENSITIVITY ANALYSIS;

ELECTRON CAPACITY; OPTICAL STRUCTURE; OPTICAL SYMMETRY; SATURATION SENSITIVITY AND CROSSTALK;

IMAGE SENSORS;

EID: 33847364742     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. C.R. Moon, et al., IEDM, p813, 2005.
2. H. Noh, et al., IEEE workshop on CCD and AIS., p197, 2005.